Indium(III) sulfide

Indium(III) sulfide
Identifiers
CAS number 12030-24-9
PubChem 16685236
ChemSpider 17617491 Y
Jmol-3D images Image 1
Properties
Molecular formula In2S3
Molar mass 325.82 g/mol
Appearance red powder
Density 4.90 g/cm³, solid
Melting point

1050.0 °C

Solubility in water insoluble
Hazards
EU classification not listed
NFPA 704
4
3
2
 Y (verify) (what is: Y/N?)
Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa)
Infobox references

Indium(III) sulfide' is the inorganic compound with the formula In2S3. Three different structures ("polymorphs") are known: yellow, α-In2S3 has a defect cubic structure, red β-In2S3 has a defect spinel, tetragonal, structure, and γ-In2S3 has a layered structure. The red, β, form is considered to be the most stable form at room temperature, although the yellow form may be present depending on the method of production. Like related covalent solids, In2S3 is insoluble in all solvents. It is attacked by acids and by sulfide. It is slightly soluble in Na2S.[1]

Indium sulfide was the first indium compound ever described, being reported in 1863.[2] Reich and Richter determined the existence of indium as a new element from the sulfide precipitate.

Contents

Structure and properties

In2S3 features tetrahedral In(III) centers linked to four sulfido ligands. β-In2S3 is a diamagnetic, n-type semiconductor with an optical band gap of 2.1 eV. It has been proposed to replace the hazardous cadmium sulfide, CdS, as a buffer layer in solar cells.[3]

Production

Traditionally it was prepared in the chemical laboratory by direct combination of the elements. Production from volatile complexes of indium and sulfur for example dithiocarbamates (e.g. Et2InIIIS2CNEt2) have been explored as methods suitable for vapor deposition techniques.[4]

General references

References

  1. ^ Indium Sulfide
  2. ^ F. Reich, Th. Richter (1863). "Vorläufige Notiz über ein neues Metall". J. Prakt. Chem. 89: 441. doi:10.1002/prac.18630890156. 
  3. ^ N. Barreau, S. Marsillac, D. Albertini and J. C. Bernede (2002). "Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD". Thin Solid Films 403: 331–334. doi:10.1016/S0040-6090(01)01512-7. 
  4. ^ S. W. Haggata M Azad Malik, M. Motevalli, and P. O'Brien (1995). "Synthesis and Characterization of Some Mixed Alkyl Thiocarbamates of Gallium and Indium, Precursors for III/VI Materials: The X-ray Single-Crystal Structures of Dimethyl- and Diethylindium Diethyldithiocarbamate". Chem. Mater. 7 (4): 716–724. doi:10.1021/cm00052a017.